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Structural, electronic, and spectroscopic effects of Ga codoping on Ce-doped yttrium aluminum garnet: First-principles study

机译:Ga掺杂在Ce掺杂的钇铝石榴石上的结构,电子和光谱效应:第一性原理研究

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摘要

Periodic-boundary-conditions density-functional theory and embedded cluster wave-function theory calculations performed on Ga-doped and Ce,Ga-codoped yttrium aluminum garnet (YAG) Y3 Al5 O12, allowed for the determination of the atomistic structures of these materials when Ga substitutes for Al in octahedral and tetrahedral sites and Ce substitutes for Y, as well as for the shifts of the local excited states of main character Ce4 f1, Ce5 d1, and Ce6 s1 induced by Ga codoping. The experimental blueshift experienced by the lowest Ce4f→5d absorption upon Ga codoping has been reproduced and it has been found to be caused by the reduction in the effective ligand splitting of the 5 d1 manifold, which is due to Ga forcing an anisotropic expansion of the surroundings of Ce. The effects of Ga on the energy centroids of the 4 f1 and 5 d1 configurations are negligible. The direct electronic effects of Ga are insignificant and all effects of Ga codoping are a consequence of the geometrical distortions it causes. This picture corresponds to a simple model under use and it contrasts with the case of La codoping, where the direct electronic effects of La and the centroid energy shift are responsible for the redshift. The reason for such a different behavior could lie in the distance between the dopant and the Ce impurity, which is shorter for Ce,La:YAG than for Ce,Ga:YAG.
机译:对掺Ga和掺Ce,Ga的钇铝石榴石(YAG)Y3Al5O12进行的周期边界条件密度泛函理论和嵌入式簇波函数理论计算,可以确定这些材料的原子结构。 Ga替代八面体和四面体位点中的Al,Ce替代Y,以及Ga共掺杂引起的主要特征Ce4 f1,Ce5 d1和Ce6 s1的局部激发态的移动。重现了Ga共掺杂时最低Ce4f→5d吸收所经历的实验性蓝移,并且发现这是由于5 d1歧管的有效配体分裂减少所致,这是由于Ga强迫了各向异性扩展。 Ce的环境。 Ga对4 f1和5 d1构型的能量质心的影响可以忽略不计。 Ga的直接电子效应微不足道,Ga共掺杂的所有效应都是其引起的几何畸变的结果。该图片对应于一个正在使用的简单模型,并且与La共掺杂的情况形成了对比,在La共掺杂的情况下,La的直接电子效应和质心能移导致了红移。这种不同行为的原因可能在于掺杂剂与Ce杂质之间的距离,对于Ce,La:YAG,此距离比对于Ce,Ga:YAG短。

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